Product details
7Semi UCC21220A Isolated Dual-channel Gate Driver Breakout Board
The 7Semi UCC21220A isolated dual-channel gate driver breakout board is a powerful and reliable solution for driving MOSFETs and GaNFETs in high-performance electronic systems. Built around the advanced UCC21220A IC, this isolated gate driver delivers a strong 4A source and 6A sink current, enabling fast switching and improved efficiency in power electronics applications.
With a robust 3.0 kVRMS isolation barrier, it ensures safe signal transmission between control and high-voltage domains, making it ideal for industrial and motor control systems. The board features a rapid 40 ns propagation delay with tight 5 ns delay matching, ensuring precise timing in switching operations.
Equipped with essential protections like undervoltage lockout (UVLO) and a disable function, this dual-channel gate driver breakout board enhances system reliability and safety. Whether you're designing motor drives, power converters, or automation systems, this module serves as a compact and efficient isolated MOSFET/IGBT gate driver solution for demanding applications.
Features:
• High Current Drive Strength: 6A peak-sink and 4A peak-source for GaNFETs and MOSFETs.
• Exceptional Propagation Delay: High-speed operation is guaranteed by a maximum propagation delay of 40 ns.
• Precision Delay Matching: In half-bridge designs, 5ns maximum delay matching guarantees optimal performance.
• Strong Ground Bounce Protection: Over 100V/ns CMTI for dependable performance in noisy settings.
• Integrated Protection: Active pulldown, UVLO, and DIS pin offer improved control and safety.
• Versatile Configuration: For enhanced drive strength, they can be employed as half-bridge, high-side, or low-side drivers with parallel output options.
Pinout Diagram:
The 7Semi UCC21220A isolated dual-channel gate driver breakout board is a powerful and reliable solution for driving MOSFETs and GaNFETs in high-performance electronic systems. Built around the advanced UCC21220A IC, this isolated gate driver delivers a strong 4A source and 6A sink current, enabling fast switching and improved efficiency in power electronics applications.
With a robust 3.0 kVRMS isolation barrier, it ensures safe signal transmission between control and high-voltage domains, making it ideal for industrial and motor control systems. The board features a rapid 40 ns propagation delay with tight 5 ns delay matching, ensuring precise timing in switching operations.
Equipped with essential protections like undervoltage lockout (UVLO) and a disable function, this dual-channel gate driver breakout board enhances system reliability and safety. Whether you're designing motor drives, power converters, or automation systems, this module serves as a compact and efficient isolated MOSFET/IGBT gate driver solution for demanding applications.
Features:
• High Current Drive Strength: 6A peak-sink and 4A peak-source for GaNFETs and MOSFETs.
• Exceptional Propagation Delay: High-speed operation is guaranteed by a maximum propagation delay of 40 ns.
• Precision Delay Matching: In half-bridge designs, 5ns maximum delay matching guarantees optimal performance.
• Strong Ground Bounce Protection: Over 100V/ns CMTI for dependable performance in noisy settings.
• Integrated Protection: Active pulldown, UVLO, and DIS pin offer improved control and safety.
• Versatile Configuration: For enhanced drive strength, they can be employed as half-bridge, high-side, or low-side drivers with parallel output options.
Pinout Diagram:
